| 摘要 |
PURPOSE:To perform an accurate alignment always easily irrespective of the variation in a projection state, the type of resist, etc., by irradiating a wafer with a light having removing action for forming an irregular surface, and forming an alignment mark by the irregularity. CONSTITUTION:A wafer 7 is conveyed, an initial exposure zone is set at an exposure position on the basis of input information, and an aperture 9 is approached above a reticle 4 to be introduced into an optical path. An actuator 13 drives the aperture 9 to irradiate only an alignment mark 12, and then a CPU 14 radiates from an excimer laser source 1 a laser beam having much larger intensity than a main exposure. When a strong exposure is executed, resist 7a is completely removed only at the part, and a reticle alignment mark image 11 remains as the irregular surface on the resist 7a. Thus, even if the distortion of a projected exposure image, variation in the magnification occur, an accurate alignment is performed irrespective of the type of the resist 7a. |
