| 摘要 |
<p>A method including the steps of: in a first buried region (4) of P-type, forming second buried regions (13) of N-type; growing, over the first (4) and second (13) buried regions, an N-type epitaxial layer (3b) defining a surface (10) of the device; forming, in the epitaxial layer, P-type isolation regions (6) extending from the surface (10) down to and in electric continuity with the first buried region (4) and defining, with the first buried region, N-type wells (5) incorporating the second buried regions; and forming P-type semiconducting regions (14) in the epitaxial layer (3b) and to the side of the isolation regions (6); the steps of forming isolation regions (6) and semiconducting regions (14) being performed in a single step of selectively introducing doping ions. <IMAGE> <IMAGE></p> |
