| 摘要 |
In a method for manufacturing a contact structure, a first insulating layer, a first conductive layer and a silicon nitride layer are sequentially formed on a semiconductor substrate. The silicon nitride layer and the first conductive layer are anistropically etched with a first pattern mask. A sidewall of the first conductive layer is oxidized. A second insulating layer is formed on the entire surface, and a contact hole is perforated in the first and second insulating layers. Finally, a second conductive layer is buried in the contact hole.
|
