| 发明名称 |
Method of manufacturing semiconductor device |
| 摘要 |
A method of manufacturing a semiconductor device includes the steps of forming a first insulating layer having a hole on a substrate, selectively forming a conductive layer in the hole, selectively forming a second insulating layer on the first insulating layer, patterning the second insulating layer, and forming an interconnection layer in an opening portion of the second insulating layer formed by patterning so as to be electrically connected to the conductive layer.
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| 申请公布号 |
US5654237(A) |
申请公布日期 |
1997.08.05 |
| 申请号 |
US19950476883 |
申请日期 |
1995.06.07 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUGURO, KYOICHI;OKANO, HARUO |
| 分类号 |
H01L21/28;H01L21/285;H01L21/316;H01L21/3205;H01L21/336;H01L21/762;H01L21/768;H01L21/8234;H01L27/088;H01L29/78;(IPC1-7):H01L21/44;H01L21/283 |
主分类号 |
H01L21/28 |
| 代理机构 |
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