发明名称 Capacitor construction with oxidation barrier blocks
摘要 A method of forming a capacitor apparatus includes providing a substrate having a node, providing an electrically conductive reaction barrier layer with opposed recessed lateral edges over the substrate node, forming an inner capacitor plate, providing oxidation barrier blocks over the opposed recessed lateral edges, forming a dielectric layer and providing an outer capacitor plate.
申请公布号 US5654224(A) 申请公布日期 1997.08.05
申请号 US19960686386 申请日期 1996.07.25
申请人 MICRON TECHNOLOGY, INC. 发明人 FIGURA, THOMAS A.;SCHUELE, PAUL J.
分类号 H01L21/02;H01L21/8242;(IPC1-7):H01L21/70;H01G4/06 主分类号 H01L21/02
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