| 摘要 |
<p>PROBLEM TO BE SOLVED: To attain formation of a thin film and etching on the back side of a wafer as well as the front side. SOLUTION: A wafer supporting device horizontally supports a wafer 2 from the lower surface in a process chamber 12 of a semiconductor manufacturing apparatus. A board-shaped susceptor 21 is arranged below the wafer 2 with its board plane being in parallel to the wafer 2, and at least three through- holes 25 vertically penetrating the susceptor 21 are formed. In each of the through-holes 25 of the susceptor 21, a lift pin 26 movable in an axial direction is passed through. On the upper end of the lift pin 26, a protrusion 27 forming a gap between the wafer 2 and the susceptor 21 for supporting the wafer 2 from its lower surface is provided. Thus, a reactive gas also flows between the wafer 2 and the susceptor 21, thereby forming a thin film on the back side of the wafer 2.</p> |
