摘要 |
<p>PROBLEM TO BE SOLVED: To lower the occupying area rate of an additive capacitor part within one pixel by using the oxide of tantalum (Ta) having a large dielectric constant in the additive capacitor part. SOLUTION: An SiO2 ground surface film 20 for protecting a transparent glass substrate 14 is deposited on the glass substrate. Next, metal Ta is deposited thereon by a sputtering method and is patterned to desired gate wirings by a photoetching method. An anodically oxidized film of Ta (Ta2 O5 ) is formed to completely cover the gate wirings of Ta. Namely, the Ta2 O5 film 24 is a gate insulating film of a first layer of a TFT on the Ta gate electrode 22 of the a-SiTFT and is the dielectric film of the additive capacitor on the adjacent Ta gate wirings 23. Next, a transparent electrode of ITO is deposited by a sputtering method and pixel electrode patterns 9 are formed by a photoetching method using an aq. HC1 soln. At this time, the pixel electrodes 9 are patterned so as to overlap on the adjacent Ta gate wirings 23.</p> |