FIELD EMISSION TYPE COLD CATHODE DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To enhance the reproducibility of an emitter shape using Si as the material and accomplish a high gate insulativeness. SOLUTION: An n-type Si board 13 is equipped with an emitter 14 whose side face has a conical shape in an arc of circle. The side face of the emitter 14 is restricted by a Si oxide insulative layer 18 formed in the surface of the board 13. The insulative layer 18 is formed by such a process that the p-region in the surface of the board 13 is turned porous by means of positive electrode chemical formation, followed by heat oxidation. The insulative layer 18 and a gate electrode 16 provided over it are equipped with a recess 18a and opening 16a as mating with the foremost part 14a of the emiter 14. The diameter of the opening 16a is set to half the diameter of the bottom part of the emitter 14, while the depth of the recess 18a is set so that more than one half of the lower part of the emitter 14 is embedded in the insulative layer 18.