TESTING OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To attain measurement of electric properties of each device at an appropriate time by simultaneously applying stress, such as, a voltage or a current, to individual devices. SOLUTION: In conducting TDDB evaluation of a plurality of devices 2 on a wafer 1, bonding pads 3 are connected by a mercury wiring 5 to connect all the devices 2 in parallel. By applying constant-voltage stress to the bonding pads 3 between both electrodes of the devices 2 by probe needles 4, a large number of devices 2 are simultaneously tested. After testing, the mercury wiring 5 is removed by a solvent and the probe needles 4 are connected to the bonding pads 3 of the individual devices 2. Thus, the characteristics of the individual devices 2 are measured.