| 摘要 |
PROBLEM TO BE SOLVED: To prevent the active oxidation of a silicon carbide film and improve the durability by forming a silicon carbide layer on the surface of a carbon fiber-reinforced composite material by a diffusing method, forming a silicon carbide film on the upper layer by a vapor chemical deposition method, and further forming a silicon alloy film on the outermost layer. SOLUTION: After the surface of a carbon fiber-reinforced carbon composite material 1 of a base material is transferred to a diffusion method silicon carbide layer 2 by a diffusion method, a CVD silicon carbide film 3 is formed by a vapor chemical deposition method, and further a silicon alloy film 4 is formed. As the alloy element of silicon alloy, one or more type selected from a group consisting of transition metals, group 3B elements is preferable. Particularly, one or more types selected from Y, Ti, Zr, V, Nb, Ta, Cr, Mo, W, B and Re having higher melting point than 1410 deg.C of the melting point of the case that the melting point of the alloy phase is a sole silicon is preferably contained as an indispensable element. Thus, the melting point of the silicon alloy phase is raised from the case of the sole silicon. |
