发明名称 NOVEL RESIST MATERIAL AND PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a resist material having high resolving power to far UV, etc., undergoing no change with the lapse of time and giving a high precision pattern by incorporating a specified polymer, a photosensitive compd. which generates an acid by exposure and a solvent capable of dissolving them. SOLUTION: This resist material contains a polymer represented by the formula, a photosensitive compd. which generates an acid by exposure and a solvent capable of dissolving them. In the formula, R<1> is H or methyl, each of R<2> and R<3> is H, 1-6C straight chain, branched or cyclic alkyl, both of R<2> and R<3> are not H, R<4> is 1-10C straight chain, branched or cyclic alkyl, etc., R<5> is H or cyano, R<6> is H or methyl, R<7> is H, cyano, etc., each of (k) and (l) is a natural number, 0.1<=k/(k+1)<=0.9, (m) is 0 or a natural number and 0.05<=m/(k+l+m)<=0.50.
申请公布号 JPH09204046(A) 申请公布日期 1997.08.05
申请号 JP19960302560 申请日期 1996.10.28
申请人 WAKO PURE CHEM IND LTD;MATSUSHITA ELECTRIC IND CO LTD 发明人 URANO FUMIYOSHI;FUJIE HIROTOSHI;ONO KEIJI;NEGISHI TAKAAKI
分类号 G03F7/004;G03F7/039;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/004
代理机构 代理人
主权项
地址
您可能感兴趣的专利