发明名称 |
Integrated structure active clamp for the protection of power devices against overvoltages, and manufacturing process thereof |
摘要 |
An integrated structure active clamp for the protection of a power device against overvoltages includes a plurality of serially connected diodes, each having a first and a second electrode, obtained in a lightly doped epitaxial layer of a first conductivity type in which the power device is also obtained; a first diode of said plurality of diodes has the first electrode connected to a gate layer of the power device and the second electrode connected to the second electrode of at least one second diode of the plurality whose first electrode is connected to a drain region of the power device; said first diode has its first electrode comprising a heavily doped contact region of the first conductivity type included in a lightly doped epitaxial layer region of the first conductivity type which is isolated from said lightly doped epitaxial layer by a buried region of a second conductivity type and by a heavily doped annular region of the second conductivity type extending from a semiconductor top surface to said buried region.
|
申请公布号 |
US5654225(A) |
申请公布日期 |
1997.08.05 |
申请号 |
US19950473792 |
申请日期 |
1995.06.07 |
申请人 |
CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO |
发明人 |
ZAMBRANO, RAFFAELE |
分类号 |
H01L27/04;H01L21/822;H01L27/02;H01L27/06;H01L29/78;(IPC1-7):H01L21/265;H01L21/70;H01L27/00 |
主分类号 |
H01L27/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|