| 摘要 |
A semiconductor memory device comprises a memory array in which word lines are driven by a single decoder or a plurality of memory arrays driven by a plurality of decoders operating with the same row address, in the memory array or memory arrays memory cell units in which a plurality of memory cells are connected in series being arranged in the form of an array, a plurality of sense amplifier arrays constituted by arranging a plurality of sense amplifiers each provided for a pair of bit lines or a plurality of pairs of bit lines to read out data from the memory cells of the memory cell arrays, the sense amplifier arrays being divided into a plurality of blocks, and the blocks corresponding to one memory cell array, a register array having a plurality of registers for storing data read out by the plurality of sense amplifiers, the register array being divided into a plurality of blocks, and the blocks corresponding to the sense amplifier block and one memory cell array, and a control circuit for independently controlling the blocks of the sense amplifier arrays and the register array and independently reading out data from the registers in the blocks.
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