| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive dielectric simulation device which can be practically used in terms of engineering and to provide a dielectric simulation method. SOLUTION: A noninverted item calculation means 22 calculates the noninverted term Qp in accordance with a prescribed formula based on the noninverted term saturated charge Qpmax and the noninverted term receiving sensitivity coefficient Kp. An inverter term calculation means 24 calculates the first inverted term Qr1 and the second inverted term Qr2 in accordance with a prescribed formula based on the inverted term saturated charge Qrmax, the resident polarization receiving sensitivity coefficient Kr and a basic electric field resistance Ec. A synthesis means 26 calculates a first history characteristic Q1 and a second history characteristic Q2 in accordance with the prescribed formula. The history characteristic peculiar to a dielectric capacitor can be specified by using five characteristic constants. Furthermore, the history characteristic of the dielectric capacitor under arbitrary impression voltage V can be simulated by using n1 and n2 regulating impression voltage V. Then, a waveform distortion due to heat impression can be simulated by internal biasing. |
