| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin-film diode which comprises a fine element area exceeding the limit of the resolution of an aligner by a method wherein a metal layer is formed on a glass substrate, a resist pattern is etched, a lower-part electrode is formed, an insulator layer is formed and an upper-part electrode is formed so as to cover the lower-part electrode. SOLUTION: A first metal layer is formed on a glass substrate 1, and a resist pattern whose shape is identical to that of the lower-part electrode is formed so as to be used as a first etching mask. The first metal layer is dry- etched and treated, and a first metal layer 12a comprising a lower step part 6 is formed. A second etching mask 5a is formed on the first metal layer 12a. The second etching mask 5a is removed, and an insulator layer which covers the surface of the lower-part electrode is then formed. A second metal layer is formed so as to cover the insulator layer, a resist pattern is formed on it, and an upper-part electrode is formed. Thereby, a high-definition liquid-crystal display device can be realized.</p> |
