发明名称 MANUFACTURE OF MICROCHIP OF FIELD EMISSION ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To manufacture a microchip of a field emission element accurately with uniform shape. SOLUTION: An oxide film 23 on a silicon substrate 21 is patterned, and using it as a mask, an impurity layer 24 is formed in the silicon substrate 21. Using a solution of hydrofluoric acid as an electrolytic solution, only the impurity layer 24 of a high concentration is formed in a porous silicon layer 25 through positive electrode reactions, and the obtained porous silicon layer 25 is oxidated at a high temp. so that precise microchips 22 are manufactured uniformly.</p>
申请公布号 JPH09204876(A) 申请公布日期 1997.08.05
申请号 JP19960309116 申请日期 1996.11.20
申请人 L JII SEMICON CO LTD 发明人 SEOKU SUU RII
分类号 H01J17/49;H01J9/02;H01L29/66;(IPC1-7):H01J9/02 主分类号 H01J17/49
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