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发明名称
CMOS SEMICONDUCTOR DEVICE OF TWO-LAYER GATE ELECTRODE STRUCTURE AND ITS MANUFACTURE
摘要
申请公布号
JPH09205152(A)
申请公布日期
1997.08.05
申请号
JP19960010835
申请日期
1996.01.25
申请人
SONY CORP
发明人
MATSUMOTO KOICHI
分类号
H01L29/78;H01L21/28;H01L21/336;H01L21/8238;H01L27/092;(IPC1-7):H01L21/823
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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