发明名称 Nonvolatile semiconductor storage system
摘要 An object is to realize a nonvolatile semiconductor storage system which can prevent a false reading operation due to the overerasure, improve the lower limit of operation margin, lower the supply voltage and form a signal power supply. When each of memory transistors 1-4 is subjected to the reading operation, a negative voltage is applied to a non-selected word line WL2 from X-decoder 5 and negative voltage generating circuit 8 to prevent the false reading operation due to the overerasure. When each of the memory transistors 1-4 is subjected to the erasing operation, a negative voltage is applied to word lines WL1 and WL2 to reduce a high voltage to be applied to a source line SL. This can realize low voltage operation and single voltage power supply operation. By applying the negative voltage to the substrate of a memory transistor when it is subjected to the reading operation, the false reading operation due to the overerasure can be prevented.
申请公布号 US5654920(A) 申请公布日期 1997.08.05
申请号 US19960681930 申请日期 1996.07.30
申请人 SEIKO EPSON CORPORATION 发明人 WATSUJI, YUKIHIRO;MARUYAMA, AKIRA
分类号 G11C17/00;G11C16/02;G11C16/04;G11C16/06;G11C16/08;G11C16/16;G11C16/26;(IPC1-7):G11C16/00 主分类号 G11C17/00
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