| 摘要 |
A method for making a microelectronic device comprising a source (14) and a drain (16) connected via a channel (4), and a gate (36) controlling the channel. According to the method, the channel is produced by doping a large-gap semiconductor substrate (2), a false gate (6) is made from an inorganic material, source (14) and drain (16) areas are formed in the substrate on either side of the false gate by depositing a second insulating film (18), etching said film above the source (20) and drain (22) locations, and depositing and etching at least one metal film to metallise the source (14) and drain (16) areas, contacts are formed for the source (24, 28) and the drain (26, 30), the false gate is removed, and the gate area is metallised.
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