| 摘要 |
The current reference device has a reference resistor (Rr) and two MOS transistors of the same conductivity type. The first transistor (T1) has gate and drain connected together at one terminal (A) of the reference resistor, and the second transistor (T2) has gate and drain connected together at the other terminal (B) of the reference resistor. The first transistor has a threshold voltage greater than the second transistor and the source of each of the transistors is connected to the same potential as the circuit substrate. A third transistor (T3), also with gate and drain connected, has a higher threshold potential than the first transistor, and is connected to it to provide a current proportional to the difference in threshold potentials.
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