| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method with which a II-IV compound semiconductor device, having a high resistance layer of current constriction structure containing a II-IV compound semiconductor with which constriction of current can be measured, can be manufactured at a small number of processes. SOLUTION: In this MISFET, after an i-ZnSe layer 2 and an n-ZnSe layer 3 have been grown successively on an i-GaAs substrate 1 by an MBE method, Cu is vacuum-deposited on the n-ZnSe layer 3, and a Cu layer 4 of specific width is formed using photolithographic technique. Then, a high resistance layer 5 is buried in the n-ZnSe layer 3 by annealing a wafer at 200 deg.C in a nitrogen atmosphere as a high resistance layer forming process and by diffusing the Cu layer 4 on then-ZnSe layer 3. Besides, as a circuit forming process, a drain electrode 6, a gate electrode 7 and a source electrode 8 are formed on the n-ZnSe layer 3, including the surface of the high resistance layer 5. |
