| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to capture an unnecessary carrier and reduce cross talk, by forming a picture element separation region of a conductive type, which is different from that of a substrate, between the picture elements. SOLUTION: A first semiconductor region 101 has a pn-junction with a substrate 100 to constitute a photodiode. A second semiconductor region plays a roll for absorbing an unnecessary carrier. The depth of junction is larger than that of the first semiconductor region 101, and in this case, the larger the depth, toe more the effect of cross-talk reduction. A second semiconductor region 102 has a potential fixing means and a bias with the same potential as the substrate 100 or a reverse bias is applied thereto. A third semiconductor region 103 plays a roll for reducing parasitic bipolar ofβcaused among the first semiconductor region 101, substrate 100, and second semiconductor region 102. The impurity density is made larger than that of the substrate 100. The third semiconductor region 103 has a sufficient withstanding voltage with the second semiconductor region 102 even when a bias is applied.
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