THIN FILM THERMISTOR MANUFACTURE METHOD

摘要

PROBLEM TO BE SOLVED: To manufacture a small and low resistance thermistor device satisfying contradicting conditions, one is that the B constant is increased and the other is that the conductivity is increased. SOLUTION: The thermistor device is manufacture by plasma CVD method. As material gas, a gas mixture of mono-silane and methane gas which is diluted by hydrogen has is used. Diborane is used as dopant gas. The flow rate of the dopant gas to the material gas is not less than 1% and that of the hydrogen gas to the material gas is not more than 4. The discharge power density is not less than 110mW/cm<2> when the plasma CVD method is conducted. The flow rate of the material gas is 40 to 60 sccm. If the thermistor device is manufactured under these conditions, it is possible for the thermistor device to have a higher coefficient (σ0 ) and have higher conductivity while preventing the B constant from decreasing.