| 摘要 |
PROBLEM TO BE SOLVED: To obtain a large capacitance with a small area in a method for manufacturing a stacked capacitor cell for constituting a DRAM. SOLUTION: A device has a storage node which is formed in an interlayer insulation film 113 on a semiconductor substrate, contacts the semiconductor substrate, and accumulates electric charge and a stacked capacitor cell consisting of the multilayer body of a cell plate 112 for forming an opposing electrode. In this case, a storage node 109 is in box shape with a wall part being erected on the end face and has a cell plate 112 opposite to the entire bottom surface and at least the inner face of the wall part, thus forming a capacitor. |
