发明名称 MANUFACTURE OF SILICON THIN FILM
摘要 PROBLEM TO BE SOLVED: To manufacture a high-quality silicon thin film by effectively removing residual oxygen in a processing atmosphere in a laser ablation method. SOLUTION: In a vacuum chamber 4, laser beam 1 is cast on a silicon target 8 and the material of the target 8 is emitted by the energy of the laser beam 1 and is deposited on a substrate 5 to form a silicon thin film 5. In this case, the inside of the vacuum chamber 1 is set to a silane gas atmosphere or a mixed gas atmosphere of silane gas and hydrogen gas.
申请公布号 JPH09199423(A) 申请公布日期 1997.07.31
申请号 JP19960008644 申请日期 1996.01.22
申请人 TOYOTA MOTOR CORP;HANABUSA MITSUGI 发明人 NAKAMURA NAOKI;HASEGAWA HIROSHI;HANABUSA MITSUGI
分类号 B23K26/00;C23C14/28;H01L21/20;H01L21/203;H01L21/336;H01L29/786 主分类号 B23K26/00
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