发明名称 |
MANUFACTURE OF SILICON THIN FILM |
摘要 |
PROBLEM TO BE SOLVED: To manufacture a high-quality silicon thin film by effectively removing residual oxygen in a processing atmosphere in a laser ablation method. SOLUTION: In a vacuum chamber 4, laser beam 1 is cast on a silicon target 8 and the material of the target 8 is emitted by the energy of the laser beam 1 and is deposited on a substrate 5 to form a silicon thin film 5. In this case, the inside of the vacuum chamber 1 is set to a silane gas atmosphere or a mixed gas atmosphere of silane gas and hydrogen gas. |
申请公布号 |
JPH09199423(A) |
申请公布日期 |
1997.07.31 |
申请号 |
JP19960008644 |
申请日期 |
1996.01.22 |
申请人 |
TOYOTA MOTOR CORP;HANABUSA MITSUGI |
发明人 |
NAKAMURA NAOKI;HASEGAWA HIROSHI;HANABUSA MITSUGI |
分类号 |
B23K26/00;C23C14/28;H01L21/20;H01L21/203;H01L21/336;H01L29/786 |
主分类号 |
B23K26/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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