| 摘要 |
PROBLEM TO BE SOLVED: To prevent film exfoliation of high melting point metal when high melting metal is formed also in position detecting marks, in a process burying the high melting point metal in a contact hole, by constituting the substratum of the position detecting marks by using metal silicide excellent in adhesion to the high melting point metal. SOLUTION: A resist pattern is formed on an interlayer insulating film 21. The pattern is used as a mask, and etching is performed. Hence a contact hole 22 is formed in an element region of a semiconductor substrate 11, and position detecting marks 23 are formed on a dicing line. In this case, metal silicide is formed in the substratum of the contact hole which metal silicide is excellent in adhesion to the high melting point metal which is to be buried in the contact hole 22 in the later process. Thereby the film exfoliation of high melting point metal which has been a problem can be prevented. |
