| 摘要 |
PROBLEM TO BE SOLVED: To provide a growth device of high productivity suitable for manufacturing a III-V compound semiconductor by providing a member for a device for manufacturing a III-V compound semiconductor which is chemically and mechanically stable. SOLUTION: In a member for a device for manufacturing a III-V compound semiconductor expressed by a general formula Inx Gay Alz N (x+y+z=1, 0<=x<=1, 0<=y<=1, 0<=z<=1), SiC which is made by converting a graphite base material into SiC or a graphite-SiC complex which is made by converting at least a surface layer of the graphite base material into SiC is used. |
