发明名称 SIMULTANEOUSLY FORMING METHOD OF THIN FILM AND THICK FILM RESISTORS ON HYBRID INTEGRATED CIRCUIT BOARD
摘要 PROBLEM TO BE SOLVED: To obtain high efficient hybrid integrated circuit simultaneously com bining the merits of high stability and high reliability of a thin film resistor as well as the merit of high output by simultaneously forming a thin film and a thick film resistor. SOLUTION: A thick film resistor is formed on a board 1. A thick film resistor protective film is formed on the thick film resistor 2. Next, a thin film resistor forming Ta and conductive tire forming Ti layer, Pd layer, Cu layer are successively formed by metallic evaporation method. Successively, the conductive wire is formed. Next, a positive sensing agent layer is formed and the parts excluding the thin film resistor producing part, after being exposed to ultraviolet rays to be developed, are removed. Next, the Ta part exposed by removing the positive sensing agent layer is removed by etching away step so as to form a thin film resistor 3 of the other remaining Ta layer. Through these procedures, higher efficient hybrid integrated circuit simultaneously combining the merits of high stability and high reliability with the merit of high output of the thick film resistor can be obtained.
申请公布号 JPH09199820(A) 申请公布日期 1997.07.31
申请号 JP19960331291 申请日期 1996.12.11
申请人 L SHII JOHO TSUSHIN KK 发明人 RI KEIKAN
分类号 H01L21/28;H01L21/02;H01L21/86;H01L27/13;H05K1/09;H05K1/16;H05K3/10;H05K3/24;H05K3/38;(IPC1-7):H05K1/16 主分类号 H01L21/28
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