| 摘要 |
PROBLEM TO BE SOLVED: To prevent a leakage current caused by silicidation by ion-implanting arsenic after first lamp annealing, and damaging a denatured layer whose etching rate is low. SOLUTION: After a high-melting-point metal film, a titanium film 8 for example is formed, lamp annealing (first lamp annealing) is performed in a nitrogen atmosphere and a titanium silicide layer 9 is formed. On that occasion, a denatured layer 10 is formed on the surface of the titanium film 8. Next, the denatured layer 10 is damaged by ion-implanting arsenic. Consequently, it becomes easy for titanium to be etched and exfoliated simultaneously in an etching process to be performed later. As the result, it becomes difficult for conductive substances to be left unremoved on the insulating spacer of a gate electrode and on an element isolation region 2, so it becomes possible to prevent leakage currents from flowing between the gate and the source/drain, and between the sources/drains of adjacent transistors at circuit operation.
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