| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS thyristor equipped with a trench-on FET wherein breakdown voltage is not lowered, and mirror capacitance is not lowered, but cell density is increased. SOLUTION: An on-FET is disposed in a trench 62, and part 68 of a P-type lower base region 66 disposed above a plane 94 is extended whereby the size of a cell is reduced from about 20μm for each side to about 5μm for each side. Further, the trench 62 is not needed to be lowered toward a blocking junction part 86 between the P-type lower base region 66 and an N-type upper base region 70. An essential division 104 of the N-type upper base region interrupts a gate 88 from the blocking junction part 86. As a result, breakdown voltage is prevented from being lowered and gate capacitance, in particular mirror capacitance is substantially prevented from being increased.
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