| 摘要 |
PROBLEM TO BE SOLVED: To form a thin film at low cost and flatten the thin film to cope with the further increase of the diameter of a wafer which forms semiconductor devices. SOLUTION: An Al film of 0.5μm thickness is formed on a semiconductor substrate 1 by sputtering, then, an interconnection pattern is transferred by photolithography and dry etching and an Al electrode interconnection layer 2 is formed. Then, on the Al electrode interconnection layer 2, a sheet film (base material) 4 whereupon an insulating film (thin film) 3 is formed is formed, and the insulating film 3 is transferred to the surface of the semiconductor substrate 1.
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