| 摘要 |
An IGBT semiconductor device is connected across switching contacts which are to be protected from arcing. When the contacts are in a normally open configuration, the gate portion of the IGBT is connected to emitter portion through the contacts, while when the contacts are in a closed configuration, the collector portion of the IGBT is connected to the emitter portion through the contacts. A capacitor is connected in parallel with the gate-collector junction. The combination of the stray collector gate capacitance and the additional capacitor is sufficient to maintain the IGBT device is conduction as the contacts are moving from their closed configuration to their open configuration, thereby preventing arcing across the contacts.
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