| 摘要 |
A low-loss substrate system (41) is provided for carrying and interconnecting optoelectronic/microwave circuits. The system includes a high-resistivity substrate, e.g., silicon of resistivity > 1x10<3> ohm-centimeter. A dielectric layer (50), e.g., silicon dioxide, is preferably deposited over at least a portion of the substrate. Low-loss microwave transmission members (54, 55) and passive microwave components, e.g., capacitors (65) and spiral inductors (64), can be fabricated directly on the dielectric layer with thin-film techniques. Optoelectronic and microwave integrated circuits are preferably mounted on the substrate system with solder bumps (70) and bonding pads. Other portions of the substrate can define grooves for receiving optical fibers. To enhance optical alignment, the grooves (48, 49) and bonding pads are preferably located with photolithographic techniques. The substrate system is especially suited for optoelectronic/microwave circuits that are realized with hybrid integration structures. |
