| 摘要 |
A floating gate diode which can be used as a sourceless memory cell, and which may be arranged into an array of memory cells is disclosed. The floating gate diode comprises: a drain region (64) formed in a substrate (62); an oxide overlying and associated with the drain region (64); and a floating gate (66) overlying the oxide. Upon application of a voltage to the drain (64), a current between the drain (64) and substrate (62) is induced in proportion to an amount of electrons stored on the gate. The cells may be arranged into an array which comprises a substrate having a surface; a plurality of drain regions, one of said drain regions respectively corresponding to one of the plurality of cells, formed in the substrate; an oxide region overlying the plurality of drain regions on the surface of the substrate; and a plurality of floating gates overlying the oxide and respectively associated with the plurality of drain regions. |
