| 摘要 |
PROBLEM TO BE SOLVED: To provide a high insulation semiconductor device improved in protective capability against high voltage by simply and effectually constructing a field plate, etc., for reducing a curve of an electric field in a semiconductor below an electrode and the surroundings of the electrode. SOLUTION: An active region 53 is disposed at a location nearest an outer periphery of a semiconductor substrate 30, and serves a roll of a diode or a transistor, and the like, and its upper portion outside the outer periphery is covered with a first insulating layer 50. An upper part of the active region 53 and an upper part of the first insulating layer 50 are covered with a relatively high conductivity polycrystalline silicon layer 60, and an upper part outside an outer periphery of the polycrystalline silicon 60 is covered with a second insulating layer 65. An upper part of the polycrystalline silicon layer and an upper part of the second insulating layer 65 are covered with an electrode metal layer 73, and there is formed a field plate double structured with a stepped outer periphery side of the metal layer 73 and a stepped outer periphery side of the polycrystalline silicon layer 60. Hereby, a curve of an electric field in the semiconductor substrate 30 is reduced to improve high withstand voltage. Further, for the second insulating layer 65 two gaps 71 are provided at positions corresponding to those inner and outer position of a protective region 54. |
