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发明名称
HIGH VOLTAGE SILICON DIODE WITH OPTIMUM ARRANGEMENT OF SILICON-GERMANIUM LAYER
摘要
申请公布号
JPH09199734(A)
申请公布日期
1997.07.31
申请号
JP19960341088
申请日期
1996.12.20
申请人
GENERAL INSTR CORP OF DERAUEA
发明人
JIYATSUKU ENGU;JIYOSEFU CHIYAN;ROORENSU RATERUZA;GUREGORII ZAKARUKU;YUN U;JIYON AMATO;DENISU GAABISU;UIREMU AINSOOBUEN
分类号
H01L21/205;H01L29/165;H01L29/861;(IPC1-7):H01L29/861
主分类号
H01L21/205
代理机构
代理人
主权项
地址
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