| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a reliable semiconductor device. SOLUTION: A semiconductor die is cured at a first low temperature, a diffusion part in the die is further deepened, an adhesive 52 which becomes volatile at a second high temperature which is lower than a temperature for changing the electrical characteristics of the die, a semiconductor die 40 is mounted to a die support 60 located in the empty part of a package housing 56, a first wedge bond is formed on a conductive pad 62 entering the empty part using a relative soft wire with the inverse bonding method, and at the same time, a second wedge bond is formed on the die 40. After burn-in or testing, the wire is pulled, a wedge bond on a bond pad 41 is broken, the adhesive 52 is exposed to a second temperature, and the adhesive is volatilized to the extent that the die 40 can be picked from the die support 60. |
