SOLUBLE FUSE FOR SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To use a soluble fuse as a memory device without losing reliability of an integrated circuit by providing a narrow cross sectional part on a conductive path as a reference fusion point, and disposing the surface of the reference fusion point in a cavity. SOLUTION: A polysilicon conductive path 4 surrounded by a lower insulating layer 2 and an upper insulating layer 3 is placed on a semiconductor substrate 1. The conductive path 4 includes a narrow cross sectional part that is obtained by reducing its width. The narrow cross sectional part is used as a reference fusion point S of the conductive path 4, and the surface of the reference fusion point S is disposed in a cavity H. A coating layer 6 of silicon nitride or another proper material is provided over the cavity H to close the same. Hereby, a soluble fuse can be used as a memory device.