| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide the base resin, which has a large difference of solubility between before and after the exposure and which effectively forms a pattern at a high resolution, by forming each two (t)-butyl groups for restricting the dissolve in the specified parts. SOLUTION: This base resin is the polymer at 5000-200000 of weight mean molecular weight expressed with a formula. In the formula, R1 means (t)-butyl group or tetrahydropyranil group. R2 means hydrogen atom or methyl group, and m/(m+n)=0.1-0.9. The polymerization initiator is one selected among a group of azobisisobutyronitrile and benzoyl peroxide. The copolymer, which is manufactured at this stage, has a dissolution restricting group, which is not dissolved in the development liquid well. Since this copolymer is easy to be dissolved by the development liquid at the time of exposure in the acid catalyst atmosphere, in the case of using the chemical amplification resist, which is mainly composed of this copolymer, in a lithography, a pattern at a high resolution can be formed.</p> |
