发明名称 PATTERN FORMATION OF POLYIMIDE RESIN FILM
摘要 PROBLEM TO BE SOLVED: To remove a projection and a rise higher than other portions, generated at a pattern edge portion, when wet etching has been performed on a polyimide resin film formed on a substrate and heat processing has been performed on the polyimide resin film to imidize the film. SOLUTION: A polyimide resin film 4 is formed on a substrate 1, and masked with a positive resist 7. Wet etching is performed on the polyimide resin film 4 by using alkali aqueous solution, and the positive resist 7 is removed by using an organic solvent. Further, additional wet etching is performed by using a solvent which dissolves an edge portion of N-methyl-2-pyrrolidone.
申请公布号 JPH09199473(A) 申请公布日期 1997.07.31
申请号 JP19960009214 申请日期 1996.01.23
申请人 HITACHI CHEM CO LTD 发明人 OMORI YOSHIKAZU
分类号 G03F7/26;G03F7/40;H01L21/306;H01L21/308;H01L21/312;(IPC1-7):H01L21/306 主分类号 G03F7/26
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