| 摘要 |
PROBLEM TO BE SOLVED: To obtain a plasma processor capable of enjoying longevity and producing the minimum fine particle pollutant even in high corrosive fluorine or chlorine plasma environment by forming an aluminum nitride film on the surface of a window base substance facing the inside of a process chamber. SOLUTION: The light emitted from the heating lamps 30 arranged beneath the lower part of a plasma etching chamber 10 passes through a quartz made window 32 and arrives at a susceptor 14 to heat the same 4. Within the window 32, an AlN layer 425μm thick is formed on one surface of a window base substance 40. The AlN layer 42 is formed by reacting sputtering step using aluminum for a target and nitrogen for a reaction gas. In order to use the window 32 either for the process chamber of a plasma etching device or the process chamber of a CVD device, the AlN layer 42 is provided on the chamber wall to be a part of the chamber wall so that the AlN layer 42 may become the inside of the process chamber.
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