FUKUGOGATAHANDOTAISOSHINOKOZO

摘要

PURPOSE:To increase the current capacity of a MOSFET by a method wherein a self-extinction type element of pressure contact type is cascade-connected to the MOSFET. CONSTITUTION:A medium is formed in the following manner: drains 3d for individual MOSFETs 3 are connected electrically to each other by a disk-shaped metal substrate 1; sources 3s for the individual MOSFETs 3 are connected electrically to each other by a ring-shaped plane 7s in the peripheral edge part of a lower-part main electrode 7; and gates 3g for the individual MOSFETs 3 are connected electrically to each other by a belt ring-shaped electrode 2g which is insulated from the substrate 1 by a ring-shaped insulating material. A self-extinction type element whose current capacity is large and which is of pressure contact type is arranged in the center of the protrusion part of the substrate 1; a wire-bonding type MOSFET chip and the pressurecontact type element are constituted integrally. By this constitution, all the MOSFETs 3 are connected in parallel to each other. Thereby, the current capacity of the MOSFETs 3 as a whole can be increased.