| 摘要 |
A semiconductor integrated circuit device including transistors operating at a high frequency band includes a semiconductor substrate 1, a Thrnugh-hole hole 13 penetrating the substrate, and one or more transistor cells 5 disposed on material 13a of a low thermal resistance filling the hole 13. Thus, the transistor cells formed on the material of a low thermal resistance filling the hole 13 are separated from the substrate surrounding the transistor cells. Accordingly, the semiconductor device generates no crack of the substrate even when the thickness of the substrate at the transistor cell part is made thinner than 30 mu m for the purpose of improving the heat radiation characteristic and a semiconductor device having an excellent heat radiation property is obtained. <IMAGE> |
