| 摘要 |
This invention relates to a BiMOS IC, such as BiCMOS IC, and production method thereof. The present invention forms an impurity layer for preventing field concentration in a bipolar transistor by the same or a different process step than that for forming a diffusion layer of a MOS FET (such as a p-layer for the channel stopper), in order to improve the breakdown voltage of the bipolar transistor (such as a p-layer as the base of a bipolar npn transistor) of a BiMOS IC having the bipolar transistor and MOS FET formed on the same semiconductor substrate. Thus, the invention can provide a BiMOS IC having an improved breakdown voltage of the bipolar semiconductor device portion without drastically changing the production process of the BiMOS IC. |
