发明名称 HANDOTAISOCHI
摘要 PURPOSE:To obtain a high-reliability and high-yield semiconductor device which enhances the bonding strength between a copper-foil shield layer for the semiconductor device and a bonding layer so as to prevent the shield layer form being stripped in a soldering operation. CONSTITUTION:An insulating layer 2 is formed on the surface of an aluminum base plate 1; a power device part including a semiconductor element 7 is constituted on the insulating layer 2. When a glass epoxy substrate 10 which is provided with a copper-foil shield layer 9 and copper-foil wiring on both faces is bonded, by using a bonding layer 8, to another region on the insulating layer 2, it is bonded by laying a glass epoxy layer 17 between the bonding layer 8 and the glass epoxy substrate 10.
申请公布号 JP2636602(B2) 申请公布日期 1997.07.30
申请号 JP19910288389 申请日期 1991.11.05
申请人 MITSUBISHI DENKI KK 发明人 NAKAJIMA TOSHIHIRO
分类号 H01L25/00;H05K1/02;H05K1/05;(IPC1-7):H01L25/07;H01L25/18;H05K9/00 主分类号 H01L25/00
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