| 摘要 |
PURPOSE:To contrive to reduce leakage current in the OFF-state by a method wherein the gate electrode and source-drain regions are so constructed as to be opposed to each other by interposing a polycrystalline Si film of low impurity concentration. CONSTITUTION:The titled element has such a structure that a gate electrode 22 is opposed to a source electrode 24 and a drain electrode 26 by interposing a polycrystalline Si film 28, which film is made of substance of low impurity concentration. Further, the polycrystalline Si film 28 of low impurity concentration is formed on the substrate 20 and a semiconductor layer 28 between the source electrode 24 and the drain electrode 26, and the gate electrode 22 is formed on top of the polycrystalline Si film 28 via insulation film 32. This construction makes the ID-VGS characteristics of this transistor to get no phenomenon of the re-increase in drain current even when the off-current decreases by a figure or more and the gate voltage is reduced. Thus, good ID-VGS characteristics can be obtained without non-ohmic property. |
