发明名称 |
FIELD-EFFECT TRANSISTOR OF THE METAL-DIELECTRIC-SEMICONDUCTOR TYPE |
摘要 |
<p>A metal-insulator-semiconductor field-effect transistor comprising an insulation substrate (1) which has at least one source region (2) and at least one drain region (3) disposed on the surface thereof together with corresponding electrodes (4,5) and at least one semiconductor gate region (6) disposed therebetween and on the surface of which a layer of a gate insulator (7) is disposed which has a gate electrode (8) disposed thereon, wherein at least one of said source region (2) or said drain region (3) is a metal conduction region and forms a Schottky barrier. <IMAGE></p> |
申请公布号 |
EP0786813(A1) |
申请公布日期 |
1997.07.30 |
申请号 |
EP19950934359 |
申请日期 |
1995.09.29 |
申请人 |
AKTSIONERNOE OBSCHESTVO ZAKRYTOGO TIPA "VL" |
发明人 |
KRASNIKOV, GENNADY YAKOVLEVICH;MIKHAILOV, VALERY ALEXANDROVICH;MORDKOVICH, VIKTOR NAUMOVICH;MURASHEV, VIKTOR NIKOLAEVICH;PRIKHODKO, PAVEL SERGEEVICH |
分类号 |
H01L29/775;H01L29/78;H01L29/786;(IPC1-7):H01L27/12 |
主分类号 |
H01L29/775 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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