| 摘要 |
<p>An organic thin film transistor including a gate (21, 31, 41, 51, 61, 71) on a layer of gate insulator material (22, 32, 42, 52, 62, 72), a source (25, 35, 45, 55, 65, 75) and a drain (26, 36, 46, 56, 66, 76) positioned in spaced apart relationship on a film (24, 34, 44, 54, 64, 74) of organic semiconductor material with uniaxially aligned molecules, the film (24, 34, 44, 54, 64, 74) of organic semiconductor material being positioned so that the molecules are aligned between the source (25, 35, 45, 55, 65, 75) and drain (26, 36, 46, 56, 66, 76) in a direction from the source (25, 35, 45, 55, 65, 75) to the drain (26, 36, 46, 56, 66, 76), and an orientation film (23, 32, 43, 52, 63, 73) positioned adjacent the film (24, 34, 44, 54, 64, 74) of organic semiconductor material so that molecular uniaxial alignment of the film (24, 34, 44, 54, 64, 74) of organic semiconductor material is achieved by the orientation film (23, 32, 43, 52, 63, 73). <IMAGE></p> |
