发明名称 Semi-conductor integrated circuit device having an internal power supply circuit capable of stably maintaining output level against load fluctuation
摘要 <p>An object is to provide a semiconductor device having an internal power supply circuit capable of supplying stable internal power supply voltage (int. Vcc) while not increasing layout area. A differential amplifying circuit (202) in a voltage down converter (109) controls potential level VOUT of the drain of transistor P14 such that it attains the reference potential VREF. If the potential VOUT increases, the gate potential of transistor N12 increases because of coupling function of a capacitance C2, and the transistor is rendered conductive. Thus the potential level VOUT is pulled down. By contrast, if the potential level VOUT lowers, transistor P12 is rendered conductive, and the potential level VOUT is pulled up. &lt;IMAGE&gt;</p>
申请公布号 EP0786776(A1) 申请公布日期 1997.07.30
申请号 EP19960110925 申请日期 1996.07.05
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 IKEDA, YUTAKA
分类号 G11C11/407;G05F1/46;G05F3/24;G11C5/14;G11C11/413;H01L21/822;H01L27/04;H01L27/10;(IPC1-7):G11C5/14 主分类号 G11C11/407
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