| 摘要 |
The object of the present invention is to realize a transparent waveguide path AlGaInP laser which is capable of a low threshold current and a high light output efficiency without deterioration in characteristic due to crystal distortion. The semiconductor laser comprises an active layer formed on a GaAs substrate, upper and lower clad layers containing the active layer therebetween a current block layer which transmits oscillation light and has a stripe-shaped opening is formed on the upper clad layer, an etching stopper layer formed between the upper clad layer and the current block layer and on the upper clad layer exposed in a stripe shape by the opening section of the current block layer, the etching stopper layer containing no aluminium; and a clad layer formed on the current block layer and on the etching stopper layer exposed in a stripe shape by the opening section of the current block layer, wherein the upper clad layer is formed of a semiconductor containing AlGaInP or AlInP. |
